就鎳薄膜熱電阻研制過(guò)程中的選材、工藝、穩(wěn)定性等問(wèn)題進(jìn)行了探討, 實(shí)驗(yàn)結(jié)果表明: 可以選用國(guó)產(chǎn)0 號(hào)鎳, 采用S2槍磁控濺射技術(shù)制備鎳薄膜熱電阻; 合適的熱處理工藝是保證電阻溫度系數(shù)A值及其一致性的關(guān)鍵; 運(yùn)用保護(hù)膜技術(shù)可以提高鎳薄膜熱電阻溫度傳感器的長(zhǎng)期穩(wěn)定性L
關(guān)鍵詞: 鎳薄膜; 熱電阻; 溫度傳感器
Abstract: D iscu ssed som e key aspect s such as m aterial select ion, p reparat ion m ethod, and stab ility imp rovem en t in develop ing N ick le2f ilm therm al resistance. The resu lt s show that 0# N ick le can be u sed as candidate m aterial fo r develop ing N ick le2f ilm therm al resistance and S2gun m agnet ron spu t tering the app rop riate p reparat ion m ethod. App lying heat t reatm en t and addit ional u lt rath in o rgano silicon f ilm s depo sit ion can keep temperatu re coeff icien t Aat certain h igh value and un ifo rm , thu s further imp rove long2
term stab ility.
Key words: n ick le2f ilm; therm al resistance; temperatu re t ran sm it ter