英特爾在半導(dǎo)體前沿技術(shù)儲(chǔ)備上

還有哪些制勝未來(lái)的殺手锏？

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英特爾技術(shù)與制造前沿研究項(xiàng)目

Intel’s Components Research teamfund sand works with universities and academic research consortia on forward-looking research topics such as Spintronics, and also on the understanding of fundamental science which is the basis of these forward-looking research.

英特爾前沿研究部門(mén)資助多家大學(xué)院校和學(xué)術(shù)機(jī)構(gòu)，共同開(kāi)展多種前沿研究課題，比如自旋電子以及這些前沿研究的基礎(chǔ)科學(xué)。

英特爾高級(jí)院士、技術(shù)與制造事業(yè)部制程架構(gòu)與集成總監(jiān)Mark T. Bohr

解讀英特爾前沿研究項(xiàng)目

Nanowire transistorsare being explored as a future option because the nanowire structure provides improves channel electrostatics that can enable further transistor gate length scaling.

納米線晶體管被認(rèn)為是未來(lái)技術(shù)的一種選擇，因?yàn)榧{米線的結(jié)構(gòu)可提供改進(jìn)通道靜電，從而進(jìn)一步實(shí)現(xiàn)晶體管柵極長(zhǎng)度的微縮。

Silicon has always been the material used in MOSFET channels, butIII-V materialssuch as GaAs and InP have improved carrier mobility that can provide higher performance or the ability to operate transistors at lower voltage for lower active power.

硅是MOSFET通道中經(jīng)常使用的材料，但是III-V 材料（如砷化鎵和磷化銦）改進(jìn)了載流子遷移率，從而提供更高的性能或者能夠在更低的電壓和更低的有功功耗下運(yùn)行晶體管。

3D stackingof silicon die can provide system integration opportunities to mix different technologies into a small form factor.

硅晶片的3D堆疊有機(jī)會(huì)實(shí)現(xiàn)系統(tǒng)集成，以便把不同的技術(shù)混裝到一個(gè)很小的地方。

A variety ofdense memoryoptions, including volatile and non-volatile memory, are being explored and developed.

多種不同的高密度內(nèi)存選擇，其中包括易失性和非易失性存儲(chǔ)技術(shù)，正在探索和開(kāi)發(fā)中。

Scaling interconnectsis just as important as scaling transistors on advanced process technologies. Novel materials and patterning techniques are being explored to enable dense interconnects.

對(duì)于精尖制程工藝來(lái)說(shuō)，微縮互聯(lián)和微縮晶體管一樣重要。新的材料和圖案成形技術(shù)正在探索中，以支持高密度互聯(lián)。

Extreme Ultraviolet(EUV) lithography using a 13.5 nm wavelength is being developed to enable better scaling as today’s 193nm wavelength tools reach their scaling limit.

極紫外（EUV）光刻技術(shù)：采用13.5納米波長(zhǎng)。由于當(dāng)今的193納米波長(zhǎng)工具已達(dá)到其微縮極限，該技術(shù)正在研發(fā)中以實(shí)現(xiàn)進(jìn)一步的微縮。

Spintronicsis a beyond-CMOS technology that promises very dense and low power circuits that are an option when CMOS can no longer be scaled.

自旋電子是一種超越CMOS的技術(shù)，當(dāng)CMOS無(wú)法再進(jìn)行微縮的時(shí)候，這是一種選擇，可提供非常密集和低功耗的電路。

Neuromorphic computingis a different processor design and architecture approach for performing some computing functions with much better power efficiency than today’s computers.

神經(jīng)元計(jì)算是一種不同的處理器設(shè)計(jì)和架構(gòu)，能夠以比當(dāng)前計(jì)算機(jī)高得多的能效執(zhí)行某些計(jì)算功能。