| Vin (Min) (V) | 6 |
| Vin (Max) (V) | 75 |
| Number of channels (#) | 1 |
| Features | FET test, Linear control, Reverse current blocking |
| Iq (Typ) (mA) | 0.4 |
| Iq (Max) (mA) | 0.72 |
| FET | External single FET |
| IGate source (Typ) (uA) | 32 |
| IGate source (Max) (uA) | 45 |
| IGate sink (Typ) (mA) | 2.8 |
| IGate pulsed (Typ) (A) | 2.8 |
| Operating temperature range (C) | -40 to 125 |
| VSense reverse (Typ) (mV) | -28 /-41 |
| Design support | EVM, Reference Design, Simulation Model |
| Rating | Catalog |
| VGS (Max) (V) | 14.7 |
- Wide Operating Input Voltage Range: +6V to +75V
- +100 Volt Transient Capability
- Charge Pump Gate Driver for External N-Channel MOSFET
- MOSFET Diagnostic Test Mode
- Fast 50ns Response to Current Reversal
- 2A Peak Gate Turn-off Current
- Minimum VDS Clamp for Faster Turn-off
- Package: SOT-6 (Thin SOT23-6)
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The LM5050-2 High Side OR-ing FET Controller operates in conjunction with an external MOSFET as an ideal diode rectifier when connected in series with a power source. This OR-ing controller allows MOSFETs to replace diode rectifiers in power distribution networks thus reducing both power loss and voltage drops.
The LM5050-2 controller provides charge pump gate drive for an external N-Channel MOSFET and a fast response comparator to turn off the FET when current flows in the reverse direction. The LM5050-2 can connect power supplies ranging from +6V to +75V and can withstand transients up to +100V.
The LM5050-2 also provides a FET test diagnostic mode which allows the system controller to test for shorted MOSFETs.
