采用 1.7mm x 2.3mm WLP 封裝的雙路共源極、42mΩ、25V、N 溝道 NexFET? 功率 MOSFET
| VDS (V) | 25 |
| Configuration | Dual Common Source |
| Rds(on) max at VGS=4.5 V (mOhms) | 42 |
| IDM - pulsed drain current (Max) (A) | 4.5 |
| QG typ (nC) | 3.1 |
| QGD typ (nC) | 0.33 |
| QGS typ (nC) | 0.85 |
| Package (mm) | WLP1.7x2.3 |
| VGS (V) | 10 |
| VGSTH typ (V) | 1 |
| ID - silicon limited at Tc=25degC (A) | 4.5 |
| ID - package limited (A) | 4.5 |
| Logic level | Yes |
- Dual N-Ch MOSFETs
- Common Source Configuration
- Small Footprint 1.7 mm × 2.3 mm
- Ultra Low Qg and Qgd
- Pb Free
- RoHS Compliant
- Halogen Free
- APPLICATIONS
- Battery Management
- Battery Protection
- DC-DC Converters
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
